Vishay Intertechnology, Inc., has introduced the first p-channel TrenchFET Gen III power MOSFET in the chipscale MICRO FOOT package.
The 20-V device claims the industry's lowest on-resistance for a p-channel MOSFET in the 1.5-mm by 1-mm footprint area.
The new Si8499DB is the first chipscale product built on TrenchFET Gen III p-channel technology. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry's best on-resistance for a p-channel MOSFET by up to half.
Vishay's TrenchFET Gen III p-channel technology allows the Si8499DB to offer ultra-low on-resistance of 32 milliohms at 4.5 V, 46 milliohms at 2.5 V, 65 milliohms at 2 V, and 120 milliohms at 1.8 V. These values are 50 percent lower at 4.5 V and 35 percent lower at 2.5 V than the previously leading 20-V p-channel chipscale device.
The Si8499DB combines TrenchFET Gen III p-channel technology with the maximum die size to footprint ratio of the device's chipscale packaging, providing an ultra-low on-resistance in a compact device. The PCB real estate required by the MICRO FOOT package is one-sixth the size of the TSOP-6 while offering somewhat comparable on-resistance, thus saving space for other product features or enabling smaller end products.
The MOSFET's low on-resistance translates into lower voltage drops in load, charger, and battery switches, resulting in faster charging and longer battery life between charges in handheld devices such as cell phones, smart phones, PDAs, and MP3 players.
The MOSFET is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC.
Availability
Samples and production quantities of the new Si8499DB TrenchFET power MOSFET are available now, with lead times of 16 weeks for larger orders.
Datasheet: Si8499DB |
